3, 0.5, and 10 mol %, respectively. GPC, IR, and NMR results show that the silphenylene units have been incorporated into the polymer of silicone resin. The TG analysis indicates that this novel silicone resin has good heat resistance selleck compound with the onset degradation

temperature of 500.3 degrees C and residual weight of 85.6% at 900 degrees C. SEM results demonstrate that the silicone resin with silphenylene units can form full and uniform films, and its surface morphology of clear paints were not damaged by heat below 350 degrees C. EIS analysis reveals that clear paints of the silicone resin with silphenylene units have good resistance to corrosion. (C) 2009 Wiley Periodicals, Inc. J Appl Polym Sci 114: 971-977, 2009″
“Background There is a lack of U.S-based studies on basal cell carcinoma (BCC) of the upper lip treated using Mohs micrographic surgery (MMS). Objective To explore characteristics of BCC of the upper lip treated using MMS. Methods We performed a chart review of BCC cases from 2005 to 2011. Results Two hundred eighty-one cases were identified. There was a slight female predominance (55%). Men

had a larger initial (p < .01) and final (p = .03) defect size. Infiltrative tumors had larger initial (p < .01) and final areas (p < .01). Ten percent of tumors were designated recurrent after previous treatment. Recurrent lesions (p < selleck products .001) and older age (p = .03) were associated with larger initial size. Complex reconstruction was required: 44% by local flap or graft and 13% by plastic surgery. Conclusion There was a 1.2:1 female to male ratio, in contrast to the previously reported female predominance of 3.5:1. This cohort showed a higher recurrence rate 5-Fluoracil than reported in the literature. Men and elderly patients were also found to have significantly larger initial lesion size. Thirteen percent of patients required repair by plastic surgery, reflecting heightened levels of cosmetic concern. These findings suggest that MMS is important in delineating subclinical tumor spread and providing complex repairs.”
“Results from

an extensive reliability characterization of HfLaSiO(N) devices, with TaN gate electrodes, are reported. It is shown that the effect of the lanthanum, initially deposited as La2O3, on a SiO2/HfSiO(N) stack, permeates the Si/SiO2 interface. A lower midgap interface state density is observed at this interface, but increased densities are seen towards the band edges. The presence of lanthanum in the dielectric results in defects in the interface layer and in the high-kappa dielectric. A profile of defects in the gate stack is suggested, inferred from a combination of electrical measurements. From the location of the defects, it is argued that the reliability of lanthanum-incorporated devices is not compromised by its presence, thus enabling a reliable route to V-t tuning of n-type metal oxide semiconductor devices.